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Resume : Electrical field enhancement at the edge of the Schottky electrode on diamond under reverse bias condition was characterized by electron beam induced current EBIC measurement. The increase of the EBIC signal was clearly observed at the edge of the electrode when the electrical field was increased more than 0. The leakage current of the diodes corresponded to the bright spots at the edge of the electrode. The position of the hot spots correspond to that of the roughness at the periphery of the Schottky electrode which have caused during the lift-off process [1].

We extracted carrier multiplication factor by analyzing EBIC intensity and applied electrical field on the devices. The value is lower than that of the reported up to now. Reference: [1] H. Umezawa, H. Gima, K. Driche, Y. Kato, T. Yoshitake, Y. Mokuno, and E. Gheeraert, "Defect and field-enhancement characterization through electron-beam-induced current analysis," Applied Physics Letters, , Resume : High degree hyperpolarization of arbitrary samples and nuclear magnetic resonance NMR agents is of great importance for sensitivity enhanced NMR sensing and imaging measurements for decades.

Protocols use only optical illumination and operate even at room temperature are of highest importance. Here, we report on the combined ab initio and model spin Hamiltonian theoretical model for a recently reported hyperpolarization measurement on a diamond sample consisting N3V and P1 centers. Green et. Resume : Previous works devoted to preparation of [] and [] textured diamond films with and faceted microcrystals as well as to search for the specific technological regimes allowing the relatively stable growth of diamond single crystals grains with the mentioned faceting have been analyzed.

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General features responsible for the growth of freestanding diamond grains of certain faceting without additional nucleation on the faces have been discussed. The PE CVD method with magnetic field discharge stabilization was applied for the growth of arrays of freestanding diamond grains island films as well as continuous films on Mo and Si substrates, respectively. Resume : Reactive Ion Etching RIE has emerged as a preferred method for diamond substrate surface treatment and device patterning. This process is crucial to achieve the fabrication of high power devices fully exploiting the exceptional properties of diamond.

The material properties of diamond however pose challenges to achieving smooth etched surfaces, especially for etch depths beyond 2 microns. Following work optimising Inductive Coupled Plasma RIE etching for surface smoothing and removal of sub-surface damage, an investigation into the effects of etch process parameters on diamond patterning is pursued. The aim is the achievement of deep etching with controlled wall angle, minimized micro-masking and etched surface damage. More specifically, the impact of gas ratio and ICP power settings on the physical and chemical properties of the etch is studied with relation to mesa quality.

Acknowledgements The EU Horizon project? Resume : Quantum technology based on diamond requires in nearly all cases ultra-pure layers, with minimized defect densities and isotopically enriched 12C compositions. For quantum magnetometry, the NV center is very promising due to its unmatched properties. In the literature one can find spin coherence times T2 up to seconds for NV centers generated deep in the diamond layer.

However, for NV centers close to the surface in the range 5 to 20 nm, the spin coherence time constant decreases to typically about 10 microseconds. The reasons for this phenomenon are attributed to surface and near-surface damage generated by mechanical polishing and plasma induced etching.

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To overcome this limitation one can perform homoepitaxial overgrowth of low defect density diamond layers of typically 1 to 10 micrometer thickness before NV incorporation. The T2 time will increase to properties comparable to the bulk. This technique can offer advantages for devices which require smooth surfaces. Vertical diamond waveguide structures however, which are required for scanning NV-magnetometry, can up-to-now only be produced by plasma etching and are therefore of limited quality.

In this contribution we introduce a bottom-up technique to generate diamond tips by diamond growth. Firstly, we grow ca.

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Then a Ti mask is deposited, followed by an O2-plasma etching step to form diamond tips of typical nm diameter and ca. These tips are used to generate a 3D diamond growth around the tips, forming and facets.

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We use our specifically designed load-lock PECVD reactor which is optimized for the deposition of thin high-quality diamond layers. Dependent on our selected growth parameters we can tune the and parameters of the growth regime to grow tips with pyramidal shapes either with sharp tips or with -oriented mesas. We will introduce our results in detail based on scanning electron microscopy imaging, atomic force microscopy and and parameter growth models.

Resume : Most of modern sensing or quantum information applications based on optical centres in diamond are generally conducted in electronic- or quantum-grade material grown by chemical vapour deposition CVD. Despite very low amounts of nitrogen and boron impurities in the ppb regime or less , such material is still inherently rich in hydrogen. Little is known concerning the homogeneity of the hydrogen concentration within one sample or from one sample to the other.

Diamond for electronic devices III

However concentrations between a few ppm and a few hundreds of ppm are reported, measured by secondary ion mass spectrometry SIMS. Hydrogen is therefore the main impurity in such samples. Recently, it was shown that nitrogen-vacancy NV centres and possibly other optical centres are fragile in what concerns hydrogen diffusion, because they can be passivated, leading to the formation of NVH centres. These are very stable and the NV centres cannot be re-activated even using high temperature treatments. As well, electronic devices using p-type or n-type doping may suffer from the presence of hydrogen which can passivate the dopants, leading to less efficient devices.

On the other hand, high-pressure high-temperature HPHT diamonds are expected to contain very little amounts of hydrogen. In this work, we study the role of hydrogen on the formation and the properties of optical centres created by ion implantation and annealing.

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Finally, we quantify the hydrogen passivation of optical centres in different experimental conditions and samples. Resume : In this work we report a method to perform piezo-spectroscopy of nanoscale systems by electrostatic field regulation. In particular, we studied diamond nanoscale needles containing color centers [1]. The application of a high electrostatic field at the apex of monocrystalline diamond nanoscale needles induces an energy splitting of the photoluminescence lines of color centers [2].

The splitting of the zero-phonon PL line of the NV0 defect has been studied as a function of the voltage applied to the tip. The measured quadratic dependence of the energy splitting on the applied voltage, reported for the NV0 defect, corresponds to the stress generated on the metal-like apex surface by the electrostatic field. Tensile stress up to 7 GPa has thus been measured in the proximity of the needle apex. The intensity of the stress, measured on the diamond nanoneedles, is higher as the apex radius of the diamond nanotips is smaller.

In perspective, these results disclose the possibility of correlative studies of structural and optical properties of color centers by exploiting the 3D atomic scale imaging capabilities of APT. The application of the method to other color centers will be also discussed. Rigutti, et al.

Resume : The diamond anvil cell DAC is the tool that allows scientists to create pressures comparable to those existing in the Earth core, above the megabar range. These conditions lead to new states of matter with specific magnetic and superconducting properties.

However, the minute size of the sample and the constraints associated to the DAC make the implementation of magnetic diagnostics highly challenging. We will report the realization of an optical magnetometry technique that can detect the sample magnetic behavior through the diamond anvil.


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The sensing is achieved with Nitrogen-Vacancy NV centers located at the surface of the diamond anvil, created by nitrogen implantation with a focused ion beam. The NV center has a spin-dependent photoluminescence. Preliminary experiments performed on MgB2 demonstrate that a superconducting state can be detected with the Meissner effect.

Resume : The nitrogen-vacancy NV color center in diamond is an atom-like system in the solid-state which specific spin properties can be efficiently used as a sensitive magnetic sensor. The use of an ensemble of NV centers, with four possible orientations, allows measuring the three spatial coordinates of the magnetic field at a given location. Such a magnetic imager can also be exploited the reverse way to perform spectral analysis in the radiofrequency domain.

For that purpose, a controlled magnetic field gradient is applied to the diamond crystal which results in a direct correspondence between the spatial position and the frequency of the electronic spin resonance of the NV centers. The magnetic field gradient is aligned along one of the four possible orientations both to preserve the photophysical properties of the NV centers and to make the bandwidth tuning easier.

As a result, we obtain an instantaneous image of the incoming frequency spectrum.